PART |
Description |
Maker |
M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
TC514260BFT TC514260BJ |
262144 WORD X 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
GM71C4256BJ GM71C4256BJ-70 GM71C4256B GM71C4256BZ- |
262144 word x 4 Bit CMOS DRAM New Generation Dynamic RAM
|
GoldStar LG[LG Semicon Co.,Ltd.] http://
|
HM514800ALJ-7 HM514800ALJ-8 HM51S4800ALJ-7 HM51480 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory 80ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
HM514280A |
18-bit Dynamic Random Access Memory
|
Renesas Technology
|
HM5118160BJ-8 HM5118160BLJ-8 |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi,Ltd.
|
HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM511740 |
4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
NTE[NTE Electronics]
|
HM514260C HM514260CJ-6 HM514260CJ-6R HM514260CJ-7 |
262,144-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
HM514170C HM514170CJ-7 HM514170CLJ-7 HM514170CLJ-8 |
262,144-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
AK5321024 |
2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|